The Relation Between Precursor Gas Flows, Thickness Dependent Material Phases, and Opto-Electrical Properties of Doped a/nc-SiO_X≥0:H Films

Doped layers are a determining factor for the performance of photovoltaic devices such as silicon heterojunction and thin film solar cells. The material properties doped hydrogenated amorphous/nanocrystalline silicon-oxide (a/nc-SiO X≥0 :H) films processed by plasma-enhanced chemical vapor deposition generally exhibit tradeoff between optical electrical performance. optoelectrical result different phases in these heterogeneous films, amorphous tissue, nanocrystalline grains, their corresponding fractions extent doping. In this article, all precursor gas flows varied to achieve wide range a/nc-SiO :H phases. A phase diagram is introduced clarify complex interplay processing conditions, dominant growth mechanisms, phases, resulting properties. addition, it discussed that strongly dependent on thickness mix not uniform along direction.